ORCID
- G Pan: 0000-0002-2678-7898
- SA Awan: 0000-0002-8543-3328
Abstract
AbstractHere we review commonly used techniques for the production of large area and high quality graphene to meet the requirements of industrial applications, including epitaxial growth on SiC, chemical vapour deposition (CVD) on transition metals and growth from solid carbon source. The review makes a comparison of the growth mechanisms, quality (such as mobility and homogeneity) and properties of the resultant graphene, limitations and the prospect of each production method. A particular focus of the review is on direct (transfer free) growth on dielectric substrate as this is potentially one of the promising techniques for graphene production which can readily be integrated into existing semiconductor fabrication processes.
Publication Date
2014-01-01
Publication Title
Graphene and 2D Materials
Volume
1
Issue
1
Recommended Citation
Li, B., Pan, G., Awan, S., & Avent, N. (2014) 'Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications', Graphene and 2D Materials, 1(1). Available at: 10.2478/gpe-2014-0003
