Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films

Authors

Genhua Pan, School of Engineering, Computing and Mathematics
Bing Li
Mark Heath, University of Exeter
David Horsell, University of Exeter
M. Lesley Wears, University of Exeter
LA Taan
Shakil Awan, School of Engineering, Computing and Mathematics

ORCID

• Genhua Pan: 0000-0002-2678-7898
• Shakil Awan: 0000-0002-8543-3328

DOI Link

10.1016/j.carbon.2013.08.036

Publication Date

2013-12-01

Publication Title

Carbon

Volume

65

ISSN

0008-6223

First Page

349

Last Page

358

Recommended Citation

Pan, G., Li, B., Heath, M., Horsell, D., Wears, M., Taan, L., & Awan, S. (2013) 'Transfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films', Carbon, 65, pp. 349-358. Available at: 10.1016/j.carbon.2013.08.036