ORCID
- Genhua Pan: 0000-0002-2678-7898
Document Type
Article
Abstract
Chemical Vapor Deposition (CVD)-graphene has potentially been integrated with silicon (Si) substrates for developing graphene/n-Si Schottky junction solar cells prepared with the top window structure. However, there are drawbacks to prepared devices such as complex silicon dioxide (SiO2)-etching steps, low fill factors and stability of doped devices. In this work, SiO2 patterns are simply formed using a sputtering process rather than the previous complex method. Additionally, the fill factor for prepared devices is developed by using transferred residue-free multi-graphene layers. The usage of 3 graphene layers improves the power conversion efficiency (PCE) to 7.1%. A recorded PCE of around 17% with a fill factor of 74% is achieved by the HNO3 dopant. To overcome the issue of stability, Poly(methyl methacrylate) as an encapsulated layer is introduced. Hence, the doped devices show great stability for storage in air for 2 weeks, and devices recovered about 95% of their efficiency. This work shows that the developed fabrication process is suitable to develop simple, low cost, stable and efficient graphene/Si Schottky solar cells.
DOI Link
Publication Date
2023-01-01
Publication Title
Carbon Trends
Volume
10
Acceptance Date
2023-01-02
Deposit Date
2023-02-14
Embargo Period
2023-02-15
Funding
We acknowledge the financial support from The Higher Committee for Education Development in Oman.
Keywords
Graphene/Si Schottky junction solar cell, A sputtering process, Top-window structure, Ideal J-V curves, Stable doped devices
Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial-No Derivative Works 4.0 International License.
Recommended Citation
Busaidi, H., Suhail, A., Jenkins, D., & Pan, G. (2023) 'Developed graphene/Si Schottky junction solar cells based on the top-window structure', Carbon Trends, 10. Available at: 10.1016/j.cartre.2023.100247
