ORCID

Abstract

This paper presents a new methodical procedure to monitor in real time the junction temperature of SiC Power MOSFET modules of parallel-connected chips utilized in machine drive systems to develop their reliability modelling and predict their lifetime. The paper implements the on-line measurements of temperature-sensitive electrical parameters (TSEP) approach, particularly the quasi-threshold voltage and the on-state drain to source voltage, to estimate the junction temperature in real time. The proposed procedure firstly applied computational fluid dynamics analysis on the module under study to determine the chip which undergoes the maximum junction temperature during typical operation of the module. Then, a calibration phase, using double-pulse tests on the selected chip, is used to generate look-up tables to relate the TSEPs under study to the junction temperature. Next, the real-time estimation of junction temperature was accomplished during the on-line operation of the three-phase inverter, taking into account the induced distortion/noises due to operation of the parallel-connected chips in the module. After that, a comparison between the two TSEPs under study was provided to demonstrate their advantages/drawbacks. Finally, reliability modelling was developed to predict the lifetime of the studied module based on the estimated junction temperature under a predetermined mission profile.

Publication Date

2025-08-05

Publication Title

Machines

Volume

13

Issue

8

Acceptance Date

2025-07-28

Deposit Date

2025-08-29

Funding

This work was supported by European Commission Horizon 2020—Mobility for Growth Program under Grant 636170.

Keywords

lifetime prediction, reliability modelling, temperature sensitive electrical parameters, SiC power MOSFET, junction temperature

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