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dc.contributor.authorPan, Genhua
dc.contributor.authorLi, B
dc.contributor.authorHeath, M
dc.contributor.authorHorsell, D
dc.contributor.authorWears, ML
dc.contributor.authorTaan, LA
dc.contributor.authorAwan, Shakil
dc.date.accessioned2016-10-04T10:27:05Z
dc.date.available2016-10-04T10:27:05Z
dc.date.issued2013-12-01
dc.identifier.issn0008-6223
dc.identifier.issn1873-3891
dc.identifier.othern/a
dc.identifier.urihttp://hdl.handle.net/10026.1/5554
dc.description.abstract

Here we demonstrate the growth of transfer-free graphene on SiO2 insulator substrates from sputtered carbon and metal layers with rapid thermal processing in the same evacuation. It was found that graphene always grows atop the stack and in close contact with the Ni. Raman spectra typical of high quality exfoliated monolayer graphene were obtained for samples under optimised conditions with monolayer surface coverage of up to 40% and overall graphene surface coverage of over 90%. Transfer-free graphene is produced on SiO 2 substrates with the removal of Ni in acid when Ni thickness is below 100 nm, which effectively eliminates the need to transfer graphene from metal to insulator substrates and paves the way to mass production of graphene directly on insulator substrates. The characteristics of Raman spectrum depend on the size of Ni grains, which in turn depend on the thickness of Ni, layer deposition sequence of the stack and RTP temperature. The mechanism of the transfer-free growth process was studied by AFM in combination with Raman. A model is proposed to depict the graphene growth process. Results also suggest a monolayer self-limiting growth for graphene on individual Ni grains.

dc.format.extent349-358
dc.languageen
dc.language.isoen
dc.publisherElsevier BV
dc.titleTransfer-free growth of graphene on SiO2 insulator substrate from sputtered carbon and nickel films
dc.typejournal-article
dc.typeArticle
plymouth.author-urlhttps://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000326773200040&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11bb513d99f797142bcfeffcc58ea008
plymouth.issuen/a
plymouth.volume65
plymouth.publisher-urlhttp://www.sciencedirect.com/science/article/pii/S0008622313007987
plymouth.publication-statusPublished
plymouth.journalCarbon
dc.identifier.doi10.1016/j.carbon.2013.08.036
plymouth.organisational-group/Plymouth
plymouth.organisational-group/Plymouth/Faculty of Science and Engineering
plymouth.organisational-group/Plymouth/Faculty of Science and Engineering/School of Engineering, Computing and Mathematics
plymouth.organisational-group/Plymouth/REF 2021 Researchers by UoA
plymouth.organisational-group/Plymouth/REF 2021 Researchers by UoA/UoA12 Engineering
plymouth.organisational-group/Plymouth/Users by role
plymouth.organisational-group/Plymouth/Users by role/Academics
dc.identifier.eissn1873-3891
dc.rights.embargoperiodNo embargo
rioxxterms.versionofrecord10.1016/j.carbon.2013.08.036
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review


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